Recent progress of the native defects and p-type doping of zinc oxide<xref rid="cpb_26_4_047702_fn1" ref-type="fn">*</xref> <fn id="cpb_26_4_047702_fn1"> <label>*</label> <p>Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).</p> </fn>

Recent progress of the native defects and p-type doping of zinc oxide* *

Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).

Tang Kun, Gu Shu-Lin^†, Ye Jian-Dong, Zhu Shun-Ming, Zhang Rong, Zheng You-Dou

(color online) The S–W plots of the three sets of undoped ZnO samples fabricated at different (O) of 300 °C/0 Pa, and 300 C/1.3 Pa subjected to post-growth annealing at different temperatures. The zoom-in of the dash-lined enclosed region is shown in the inset. The arrows indicate the thermal-induced conversions to the V defect. The samples exhibiting the GL with the peak at 2.4 eV are marked by the green rectangles.^[43]