Recent progress of the native defects and p-type doping of zinc oxide<xref rid="cpb_26_4_047702_fn1" ref-type="fn">*</xref> <fn id="cpb_26_4_047702_fn1"> <label>*</label> <p>Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).</p> </fn>

Recent progress of the native defects and p-type doping of zinc oxide* *

Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).

Tang Kun, Gu Shu-Lin^†, Ye Jian-Dong, Zhu Shun-Ming, Zhang Rong, Zheng You-Dou

(color online) Electric characteristics of all samples, as-grown and annealed, showing (a) resistivity; (b) carrier concentration, the or marked in panel (b) means that the measurement gives indefinite sign of Hall coefficient (); (c) Hall mobility. The inset in panel (a) shows the plots of Hall voltage versus applied field for annealed samples A, B, C, and D, respectively. The solid lines denote the linear fitting to the measured data.^[25]