Recent progress of the native defects and p-type doping of zinc oxide<xref rid="cpb_26_4_047702_fn1" ref-type="fn">*</xref> <fn id="cpb_26_4_047702_fn1"> <label>*</label> <p>Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).</p> </fn>

Recent progress of the native defects and p-type doping of zinc oxide* *

Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).

Tang Kun, Gu Shu-Lin^†, Ye Jian-Dong, Zhu Shun-Ming, Zhang Rong, Zheng You-Dou

(color online) Carrier concentration and conductivity type of ZnO layers against Te flux for 0–0.06/s. Empty circle () represents the undoped ZnO, while solid circle () denotes the N-doped ZnO. The insets show the magnetic field dependence of Hall voltages of (a) u-ZnO and (b) ZnO:[N + Te]. The magnetic field is varied from KGs to KGs.^[162]