Recent progress of the native defects and p-type doping of zinc oxide<xref rid="cpb_26_4_047702_fn1" ref-type="fn">*</xref> <fn id="cpb_26_4_047702_fn1"> <label>*</label> <p>Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).</p> </fn>

Recent progress of the native defects and p-type doping of zinc oxide* *

Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001).

Tang Kun, Gu Shu-Lin^†, Ye Jian-Dong, Zhu Shun-Ming, Zhang Rong, Zheng You-Dou

(color online) Electrochemical (Mott-Schottky) and photoelectrochemical characterization of ZnO:N prepared at 250 °C (blue ellipse), 550 °C (red ellipse), and ZnO-ref (gray ellipse). The comparison with the ternary phase diagram reporting the compositions of all compounds suggests that ZnO poor nitrogen-doped samples are of p-type while Zn-rich samples are of n-type (on = under illumination, off = in the dark).^[106]