Recent progress of the native defects and p-type doping of zinc oxide Project supported by the State Key Program for Basic Research of China (Grant No. 2011CB302003), the National Natural Science Foundation of China (Grant Nos. 61274058, 61322403, 61504057, and 61574075), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130013 and BK20150585), and the Six Talent Peaks Project in Jiangsu Province, China (Grant No. 2014XXRJ001). |
(color online) “Universal acceptor level” models for Cu, N, and Li acceptors in semiconductors. When an acceptor level is in the gap, the acceptor is deep (localized). When a level is in the valence band, the acceptor is shallow (hydrogenic).[ |
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