Review of flexible and transparent thin-film transistors based on zinc oxide and related materials
FESEM image of cracks in Al2O3 film with a thickness of 200 nm on PEN after 0.6% strain.[
Review of flexible and transparent thin-film transistors based on zinc oxide and related materials |
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FESEM image of cracks in Al2O3 film with a thickness of 200 nm on PEN after 0.6% strain.[ |
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