Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Zhang Yong-Hui¹, Mei Zeng-Xia^{1, †}, Liang Hui-Li¹, Du Xiao-Long^{1, 2, ‡}

(color online) Capacitance–voltage (C–V) measurements of Al₂O₃ dielectrics deposited at low temperatures on (a) p⁺⁺-silicon, (b) quartz glass, (c) PEN, and (d) PI substrates.