Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Zhang Yong-Hui¹, Mei Zeng-Xia^{1, †}, Liang Hui-Li¹, Du Xiao-Long^{1, 2, ‡}

(color online) Different formation mechanisms of CBM, VBM, and bandgap in silicon (a) and ZnO (c) semiconductors, as well as crystal structures and CBM/VBM wave functions in silicon (b) and ZnO (d) semiconductors.^[128]