Review of flexible and transparent thin-film transistors based on zinc oxide and related materials
Zhang Yong-Hui1, Mei Zeng-Xia1, †, Liang Hui-Li1, Du Xiao-Long1, 2, ‡
       

(color online) Device structure and performance of flexible transparent ZnO diode. (a) Conceptualized structure diagram, which features two-terminal configuration. (b) Fabrication procedure of field-effect diode. (c) Optical transmittance spectra of devices on glass and PEN substrates with transmittance over 80% in a visible spectral range. The insets show the photographs of these two devices. (d) Current–voltage (IV) characteristics of field-effect diode with a high rectification ratio of while flat and bent. Insets show the photographs of device under test.[88]