Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Zhang Yong-Hui¹, Mei Zeng-Xia^{1, †}, Liang Hui-Li¹, Du Xiao-Long^{1, 2, ‡}

(color online) Strain directions with respect to the channel direction. Schematic of tensile strains (a) parallel and (b) perpendicular to the channel direction in flexible TFT. (c) Normalized IGZO saturation mobility changes induced by mechanical strains parallel or perpendicular to channel.^[42]