Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions
Mao Wei1, Wang Hai-Yong1, Wang Xiao-Fei2, †, Du Ming1, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

The breakdown voltage and the specific on-state resistance versus the p-pillar height in the SD-D-semi-SJ MOSFET. .