Improvement of reverse blocking performance in vertical power MOSFETs with Schottky

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

Mao Wei¹, Wang Hai-Yong¹, Wang Xiao-Fei^{2, †}, Du Ming¹, Zhang Jin-Feng¹, Zheng Xue-Feng¹, Wang Chong¹, Ma Xiao-Hua¹, Zhang Jin-Cheng¹, Hao Yue¹

(color online) (a) Potential distributions along the line as shown in Fig. 1 corresponding to the devices in Fig. 6(a), and (b) electric field distribution along the line in the SD-D-semi-SJ MOSFET for different Schottky–drain bias voltages corresponding to Fig. 6(b).