Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions
Mao Wei1, Wang Hai-Yong1, Wang Xiao-Fei2, †, Du Ming1, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

(color online) Off-state performances at reverse BV in three devices corresponding to Fig. 5: (a) equipotential lines distribution, (b) electric field distribution along the line as shown in Fig. 1, and (c) total current density distribution. , , for all devices. .