Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions
Mao Wei1, Wang Hai-Yong1, Wang Xiao-Fei2, †, Du Ming1, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

(color online) The 2D current density distributions at V and V corresponding to the devices in Fig. 2.