Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions
Mao Wei1, Wang Hai-Yong1, Wang Xiao-Fei2, †, Du Ming1, Zhang Jin-Feng1, Zheng Xue-Feng1, Wang Chong1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

(color online) The trade-off characteristics between the specific on-resistance and the breakdown voltage for different MOSFETs.