Improvement of reverse blocking performance in vertical power MOSFETs with Schottky

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

Mao Wei¹, Wang Hai-Yong¹, Wang Xiao-Fei^{2, †}, Du Ming¹, Zhang Jin-Feng¹, Zheng Xue-Feng¹, Wang Chong¹, Ma Xiao-Hua¹, Zhang Jin-Cheng¹, Hao Yue¹

(color online) The optimized breakdown voltage and the specific on-state resistance versus the n-drift concentration N in the SD-D-semi-SJ MOSFET. Each breakdown voltage is obtained by optimizing the p-pillar height to approach the maximum value for a given N.