Improvement of reverse blocking performance in vertical power MOSFETs with Schottky

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

Mao Wei¹, Wang Hai-Yong¹, Wang Xiao-Fei^{2, †}, Du Ming¹, Zhang Jin-Feng¹, Zheng Xue-Feng¹, Wang Chong¹, Ma Xiao-Hua¹, Zhang Jin-Cheng¹, Hao Yue¹

(color online) Cross section schematics and electric field distribution sketch along the line for (a) SD MOSFET, (b) SD-D-semi-SJ MOSFET, and (c) SD-semi-SJ MOSFET. The line or denotes the vertical direction at the middle or the left edge of device, respectively. The line denotes the horizontal direction at a distance of from the Schottky–drain.