A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
Wang Hui
1, 2
, Wang Ning
1, 2
, Jiang Ling-Li
1, 2
, Lin Xin-Peng
1, 2
, Zhao Hai-Yue
1, 2
, Yu Hong-Yu
1, 2, †
(color online)
as a function of
for the single FG. The
,
nm, and
nm. The TD and BD are both SiO
2
.
