A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang Hui^{1, 2}, Wang Ning^{1, 2}, Jiang Ling-Li^{1, 2}, Lin Xin-Peng^{1, 2}, Zhao Hai-Yue^{1, 2}, Yu Hong-Yu^{1, 2, †}

(color online) Dependence of transfer characteristics on the failure of FGs. 6 FGs with equal and equal is applied. Other parameters are , , nm, and nm. The TD and BD are both SiO₂. The is 1 V.