A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang Hui^{1, 2}, Wang Ning^{1, 2}, Jiang Ling-Li^{1, 2}, Lin Xin-Peng^{1, 2}, Zhao Hai-Yue^{1, 2}, Yu Hong-Yu^{1, 2, †}

(color online) (a) The as a function of . The and were 10 nm and 20 nm, respectively; (b) The as a function of . The and were 1× 10¹³ cm⁻² and 20 nm, respectively; (c) The as a function of . The and were 1× 10¹³ cm⁻² and 10 nm, respectively. The TD and BD were the same material and the is 5.3× 10¹² cm⁻². Single FG with of (equal to the was applied.