A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang Hui^{1, 2}, Wang Ning^{1, 2}, Jiang Ling-Li^{1, 2}, Lin Xin-Peng^{1, 2}, Zhao Hai-Yue^{1, 2}, Yu Hong-Yu^{1, 2, †}

(color online) The as a function of . The TD and BD were both SiO₂. The and were 10 nm and 20 nm, respectively. Single FG with of (equal to the was applied.