A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
Wang Hui1, 2, Wang Ning1, 2, Jiang Ling-Li1, 2, Lin Xin-Peng1, 2, Zhao Hai-Yue1, 2, Yu Hong-Yu1, 2, †
       

(color online) Schematic charge distribution and energy band diagram of (a) conventional MIS HEMT and (b) FG HEMT.