A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang Hui^{1, 2}, Wang Ning^{1, 2}, Jiang Ling-Li^{1, 2}, Lin Xin-Peng^{1, 2}, Zhao Hai-Yue^{1, 2}, Yu Hong-Yu^{1, 2, †}

(color online) Schematic illustration of the HEMT structure with split floating gates (the number of FGs can be adjusted). The gate length ( is , the gate-to-source spacing ( and gate-to-drain spacing ( are both .