Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640 × 512 focal plane array

Hao Hong-Yue^{1, 2}, Xiang Wei^{1, 2}, Wang Guo-Wei^{1, 2}, Xu Ying-Qiang^{1, 2}, Han Xi^{1, 2}, Sun Yao-Yao^{1, 2}, Jiang Dong-Wei^{1, 2}, Zhang Yu^{1, 2}, Liao Yong-Ping^{1, 2}, Wei Si-Hang^{1, 2}, Niu Zhi-Chuan^{1, 2, †}

(color online) (a) Response, (b) current–voltage characteristic, (c) NEDT image, and (d) DC voltage image measured at 77 K.