Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
Di Shaoyan1, Shen Lei1, Lun Zhiyuan1, Chang Pengying1, Zhao Kai1, 3, †, Lu Tiao2, Du Gang1, Liu Xiaoyan1, ‡
       

(color online) Electron scattering rate spectra of devices with surface orientations of (100) and (111). AP: intra-valley acoustic phonon scattering; OP: intra-valley optical phonon scattering; Γ –L: inter-valley optical phonon scattering between Γ and L valleys; L–L: inter-valley optical phonon scattering among L valleys; SR: surface roughness scattering; POP: polar optical phonon scattering; total: total scattering rate.