Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Di Shaoyan¹, Shen Lei¹, Lun Zhiyuan¹, Chang Pengying¹, Zhao Kai^{1, 3, †}, Lu Tiao², Du Gang¹, Liu Xiaoyan^{1, ‡}

(color online) The ratio of electrons in different types of subbands at the virtual source. The numbers of subbands in the label and the color of the symbols correspond to the marks in the insight figure. The transport effective masses are marked in the same color with the corresponding symbols.