Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Di Shaoyan¹, Shen Lei¹, Lun Zhiyuan¹, Chang Pengying¹, Zhao Kai^{1, 3, †}, Lu Tiao², Du Gang¹, Liu Xiaoyan^{1, ‡}

(color online) The relations of (a) carrier density at the virtual source and (b) the injection velocity at the virtual source with the gate voltage for devices with surface orientations of (100) and (111).