Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Di Shaoyan¹, Shen Lei¹, Lun Zhiyuan¹, Chang Pengying¹, Zhao Kai^{1, 3, †}, Lu Tiao², Du Gang¹, Liu Xiaoyan^{1, ‡}

(color online) The subband profiles of devices under surface orientations of (100) and (111) with V_G = 0.6 V and V_D = 0.6 V. The insight figures show the Brillouin zone of each case.