Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Di Shaoyan¹, Shen Lei¹, Lun Zhiyuan¹, Chang Pengying¹, Zhao Kai^{1, 3, †}, Lu Tiao², Du Gang¹, Liu Xiaoyan^{1, ‡}

(color online) The electron density distributions along the transport direction in devices of (100) and (111) surface orientations.