Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
Di Shaoyan1, Shen Lei1, Lun Zhiyuan1, Chang Pengying1, Zhao Kai1, 3, †, Lu Tiao2, Du Gang1, Liu Xiaoyan1, ‡
       

(color online) The ID–VG curves of the simulated devices with (100) and (111) surface orientations.