Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs

Di Shaoyan¹, Shen Lei¹, Lun Zhiyuan¹, Chang Pengying¹, Zhao Kai^{1, 3, †}, Lu Tiao², Du Gang¹, Liu Xiaoyan^{1, ‡}

(color online) (a) The 3D schematic structure of the energy valleys in the Brillouin zone. (b) The projection of energy valleys in devices with surface orientations of (100) and (c) (111). The transport direction is along the (001) and orientations, respectively. The numbers written on the valleys indicate different types of valleys.