Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
(color online) The schematic structure of the simulated device. The gate length is 10 nm and the effective oxide thickness (EOT) is 1 nm.
Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs |
|
(color online) The schematic structure of the simulated device. The gate length is 10 nm and the effective oxide thickness (EOT) is 1 nm. |
| |