Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In2S3 heterostructure and its solar cell performance

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In₂S₃ heterostructure and its solar cell performance

Yu Jinling^{1, 2}, Zheng Zhongming¹, Dong Limei¹, Cheng Shuying^{1, 2, †}, Lai Yunfeng¹, Zheng Qiao¹, Zhou Haifang¹, Jia Hongjie¹, Zhang Hong¹

(color online) Valance band spectra of (a) the In₂S₃ and (b) CZTS film samples, (c) In 3d core-level spectra of the In₂S₃ and (d) CZTS/In₂S₃ (deposited at 150 °C) samples, (e) Zn 2p core-level spectra of the In₂S₃, and (f) CZTS/In₂S₃ (deposited at 150 °C) samples. The VBM positions are determined by extrapolating the linear edges of the VB spectra to the baseline, and the CL spectra are fitted to Voigt function.