Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

(color online) The Si 2p XPS spectra of ultra-thin SiO_x layer (thermal oxidation for 10 min at 700 C).