Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

(color online) Si 2p electron emission in XPS spectra for the samples at 600 C (τ is about 3 s) and 200 C (τ is about 30 s) vacuum annealing, respectively: (a) the subtraction of background; (b) normalized and enlarged; (c) curve fitting of Si 2p peak for 3 s in τ ; (d) curve fitting of Si 2p peak for 30 s in τ ; (e) secondary curve fitting of Si 2p peak for 3 s in τ ; (f) secondary curve fitting of Si 2p peak for 30 s in τ .