Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

(color online) Minority carrier lifetime profiles of the samples before and after 200- C vacuum annealing, and the corresponding ITO deposition by sputtering: (a) 700- C/10-min thermal oxide passivation; (b) ITO sputtering treatment; (c) 200- C vacuum annealing (in unit s).