Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

(color online) The varying curves of samples’ τ with the temperature, the samples including normal thermal oxidation of silicon, then deposition of ITO film on silicon by magnetron sputtering and a vacuum annealing for 30 min, respectively (“ ” represents the standard deviation).