Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

Cross-sectional TEM micrograph of ITO/SiO_x/n-Si structure. (a) ITO film is deposited on silicon after 700- C/10-min thermal oxidation treatment; (b) ITO film is directly deposited on two-sides of unoxidized silicon.