Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

(color online) The XPS depth profiling of ITO/SiO_x/n-Si structure. (a) ITO film is deposited on silicon after 700 C/10 min thermal oxidation treatment, relative atomic percent distribution of In, Sn, Si, and SiO_x as a function of etching time; (b) ITO film is directly deposited on two-sides of unoxidized silicon, relative atomic percent distribution of In, Sn, Si, and SiO_x as a function of etching time; (c) Si 2p spectra of etching time at 720 s corresponds to Fig. 2(a); (d) Si 2p spectra of etching time at 760 s corresponds to Fig. 2(b).