Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO<i>x</i>/Si system

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system

Gao Ming¹, Du Hui-Wei¹, Yang Jie¹, Zhao Lei¹, Xu Jing², Ma Zhong-Quan^{1, 2, †}

(color online) Minority carrier lifetime profiles of the identical silicon wafer under the different conditions: (a) a bare silicon is passivated by 0.08-mol/L iodine; (b) 700- C/10-min thermal oxide passivation; (c) after magnetron sputtering deposition of ITO film; (d) second passivation with 0.08-mol/L iodine; (e) double-sided deposition of ITO film by sputtering on a non-oxidized silicon wafer; (f) third passivation with 0.08-mol/L iodine (unit: s).