Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Wei Xia1, Yan Fa-Guang1, Shen Chao1, Lv Quan-Shan1, Wang Kai-You1, 2, †
       

(color online) (a) Schematic of vertical WSe2/MoS2 heterojunction; (b) IdsVds curves measured in the dark and under the illumination whose wavelength is 514 nm and power is 5 µW. The inset shows response of the current with respect to periodic on/off of the illumination; (c) EQE under different power of 514 nm and 633 nm laser at Vds = 0 and Vg = 0.[86]