Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Wei Xia1, Yan Fa-Guang1, Shen Chao1, Lv Quan-Shan1, Wang Kai-You1, 2, †
       

(color online) (a) Device schematic of the MoS2/Si heterojunction photodetector.[61] (b) Schematic illustration shows the separation of the photocarriers under illumination.[61] (c) Photoresponse characteristics measured under different light intensities of 808 nm laser.[59] (d) Responsibility and specific detectivity with respect to the light intensity.[61] (e) Schematic structure of MoS2/GaAs heterojunction.[64] (f) Current density-voltage curves of MoS2/GaAs heterojunction under dark and illumination.[64]