Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Wei Xia1, Yan Fa-Guang1, Shen Chao1, Lv Quan-Shan1, Wang Kai-You1, 2, †
       

(color online) (a) Device schematic diagram. (b) The log plotted IdsVg curve was measured under Vds = 500 mV. The color gradient implies the transition between hole- and electron-doping. Inset shows the data on a linear scale. (c) Color maps of Ids under different Vlg, Vrg and Vds which suggest the types of the junctions. (d) IdsVds characteristics under different illumination wavelength. The inset shows the responsivity (R) under Vds = −1 V and Vds = 0.[40]