Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Wei Xia1, Yan Fa-Guang1, Shen Chao1, Lv Quan-Shan1, Wang Kai-You1, 2, †
       

(color online) (a) Lateral device schematic diagram of PN junction by AuCl3 chemical dopant.[46] (b) Ids–Vds characteristics measured in different gate configurations.[46] (c) EQE and D* with respect to the wavelength of light at Vds = +1.5 V and Vg = 0, 40 V and −40 V.[46] (d) Vertical PN junction schematic with CHF3 plasma-treated MoS2 layers.[52] (e) Jds–Vds characteristics of CHF3 plasma-treated PN junctions.[52] (f) EQE under different wavelength of light.[52]