Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Wei Xia1, Yan Fa-Guang1, Shen Chao1, Lv Quan-Shan1, Wang Kai-You1, 2, †
       

(color online) (a) Device schematic diagram and optical image of WSe2/BP heterojunction. (b) and (c) Ids–Vds characteristics under different Vg. The insets show the rectification ratio with respect to Vg. (d) Relations between EQE and power of laser under Vg = −40 V and Vg = 31 V.[106]