An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

Tang Yin¹, Cai Qing¹, Yang Lian-Hong², Dong Ke-Xiu³, Chen Dun-Jun^{1, †}, Lu Hai¹, Zhang Rong¹, Zheng You-Dou¹

(color online) Spectral responsivities of the designed APDs with Al_0.3Ga_0.7N/Al_0.45Ga_0.55N heterostructure multiplication region in both cases with and without the DBR structure at 0 V and −70 V.