An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization
Tang Yin1, Cai Qing1, Yang Lian-Hong2, Dong Ke-Xiu3, Chen Dun-Jun1, †, Lu Hai1, Zhang Rong1, Zheng You-Dou1
       

(color online) The calculated multiplication gain and the avalanche breakdown voltage of the designed structure with different low-Al-content AlGaN layers.