Superjunction nanoscale partially narrow mesa IGBT towards superior performance |
(color online) Simulated short circuit waveforms of the conventional IGBT, 30 nm PNM-IGBT, SJ-PNM-IGBT, and 30 nm SJ-PNM-IGBT with wide floating P-well. The gate voltage and DC bus voltage are set to be 15 V and 600 V, respectively. The gate resistor of 5 Ω and stray inductance 20 nH are used. The thermal resistance is 0.5 k/kWcm2. |