Superjunction nanoscale partially narrow mesa IGBT towards superior performance
Yu Qiao-Qun, Lu Jiang †, Liu Hai-Nan, Luo Jia-Jun, Li Bo, Wang Li-Xin, Han Zheng-Sheng
       

(color online) Simulated turn-off waveforms for 4 structures at 5 times rated current condition (500 A/cm2). The gate resistor is 5 Ω and the stray inductance is 20 nH. The thermal resistance is 0.5 k/kW·cm2.