Superjunction nanoscale partially narrow mesa IGBT towards superior performance
Yu Qiao-Qun, Lu Jiang †, Liu Hai-Nan, Luo Jia-Jun, Li Bo, Wang Li-Xin, Han Zheng-Sheng
       

(color online) Simulated turn-off (a) current and (b) voltage waveforms of the conventional IGBT, 30 nm PNM-IGBT, SJ-IGBT, and 30 nm SJ-PNM-IGBT. The pillar doping concentration of SJ-IGBT and SJ-PNM-IGBT is 1×1016 cm−3.